Ferroelectric Memory completed a $20 million Series B funding led by M Ventures and imec.xpand.

Ferroelectric Memory GmbH (FMC), a Dresden, Germany-based ferroelectric hafnium oxide technology leader, announced that it has completed a $20 million Series B funding.

The money was raised from investors led by the new investors M Ventures and imec.xpand, with participation of SK hynix, Robert Bosch Venture Capital, and TEL Venture Capital. The lead investor of Series A eCapital also participated in this round.

The new set of investors aims to support FMC throughout the whole semiconductor value chain to bring FMC’s advanced ferroelectric memory technology to market. The company plans to expand its team in Dresden, as well as to start international expansion, including into the US and Asian markets.

Ferroelectric Memory, founded in 2016 by CEO Ali Pourkeramati, has developed the most advanced ferroelectric hafnium oxide memory technology to deliver leading-edge non-volatile memory for future electronics and computing innovation.

The company is currently working with major semiconductor companies for its embedded and stand-alone memory solution. Its ferroelectric field-effect transistor (FeFET) and capacitor (FeCAP) technology is simple to integrate, fast, low-power, and scalable, and has high endurance with decades of data retention, suitable for a broad range of AI, IoT, edge, data center, and embedded applications.